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| VSM IT(AV)M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 * * * * * Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy management and industrial applications Optimum power handling capability Interdigitated amplifying gate. The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) Blocking Maximum rated values Note 1 Parameter Max. surge peak blocking voltage Max. repetitive peak reverse blocking voltage Critical rate of rise of commutating voltage Characteristic values Symbol Conditions VSM VRM 1) min typ max 6500 5600 2000 Unit V V V/s f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms Exp. to 3750 V, Tvj = 125C 1) dv/dtcrit Parameter Max. leakage current Symbol Conditions IRM VRM, Tvj = 125 C min typ max 400 Unit mA 1) VRM is equal to VSM up to Tvj = 110 C; de-rating of 0.11% per C applicable for Tj below +5 C Mechanical data Maximum rated values Note 1 Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da FM = 90 kN, Ta = 25 C min 35 53 22 typ max 2.9 35.6 Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STB 13N6500 On-state Maximum rated values Note 1 Parameter Average on-state current RMS on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) IT(RMS) ITSM I2t ITSM I2t Full sine wave, Tc = 70 C tp = 10 ms, Tvj = 125 C, sine wave after surge: VD = VR= 0 V tp = 8.3 ms, Tvj = 125 C, sine wave after surge: VD = VR= 0 V Half sine wave, Tc = 70 C min typ max 1405 2205 3120 22.0x10 2.42x10 24.0x10 2.39x10 3 Unit A A A A A2s A A2s Unit V V m mA mA mA mA 6 3 6 Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT VT0 rT IH IL Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C IT = 1500 A, Tvj = 125 C IT = 670 A - 2000 A, Tvj = 125 C min typ max 2.12 1.2 0.6 300 175 500 300 Switching Maximum rated values Note 1 Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 125 C, ITRM = 2000 A, VD 3750 V, IFG = 2 A, tr = 0.5 s Cont. f = 50 Hz Cont. f = 1Hz min typ max 250 500 Unit A/s A/s s Circuit commutated turn-off tq time Characteristic values Tvj = 125 C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67VRM, dvD/dt = 20V/s, 800 Parameter Recovery charge Recovery charge Gate turn-on delay time Symbol Conditions Qrr IRM tgd Tvj = 125 C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s Tvj = 25 C, VD = 0.4VRM, IFG = 2 A, tr = 0.5 s min 2400 50 typ max 3800 70 3 Unit As A s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 2 of 7 5STB 13N6500 Triggering Maximum rated values Note 1 Parameter Peak forward gate voltage Max. rated peak forward gate current Peak reverse gate voltage Max. rated peak forward gate power Characteristic values Symbol Conditions VFGM IFGM VRGM For DC gate current PGM min typ max 12 10 10 3 Unit V A V W Max. rated gate power loss PG see Fig. 9 Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current Symbol Conditions VGT IGT VGD IGD Tvj = 25 C Tvj = 25 C VD = 0.4 x VRM, Tvj = 125 C VD = 0.4 x VRM min typ max 2.6 400 Unit V mA V mA 0.3 10 Thermal Maximum rated values Note 1 Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 81...108 kN Anode-side cooled Fm = 81...108 kN Cathode-side cooled Fm = 81...108 kN Double-side cooled Fm = 81...108 kN Single-side cooled Fm = 81...108 kN -40 min typ 140 max 11.4 22.8 22.8 2 4 Thermal resistance junction Rth(j-c) to case (Valid for one thyristor half no heat flow to the second half.) Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Z th(j- c) (t) = R i (1 - e- t/ i ) i =1 i Ri(K/kW) i(s) 1 6.770 0.8651 2 2.510 0.1558 3 1.340 0.0212 4 0.780 0.0075 Fig. 1 Transient thermal impedance junction-to case n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 3 of 7 5STB 13N6500 On-state characteristic model: V = A + B I + C ln(I + 1) + D I T max T T T Valid for iT = 200 - 2000 A A 1.328 B 257.0x10 -6 C -92.0x10 -3 D 28.0x10 -3 Fig. 2 On-state characteristics, Tj = 125C, 10ms half sine Fig. 3 On-state voltage characteristics Tcase 130 125 120 115 110 105 100 95 90 85 80 75 70 0 (C) Double-sided cooling DC 180 rectangular 180 sine 120 rectangular 500 1000 1500 2000 2500 ITAV (A) Fig. 4 On-state power dissipation vs. mean on-state current. Switching losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Switching losses ignored. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 4 of 7 5STB 13N6500 5STB 13N6500 Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss Fig. 10 Recovery charge vs. decay rate of on-state current Fig. 11 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 5 of 7 5STB 13N6500 Turn-on and Turn-off losses Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves Turn-off Total power loss for repetitive waveforms: PTOT = PT + Won f + Woff f where 1 PT = IT VT (IT ) dt T0 T Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 6 of 7 5STB 13N6500 g g Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1035-03 May 06 |
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